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| SMD Type MOSFET Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Unit: mm Features n Small footprint due to small and thin package n Low drain-source ON resistance: rDS(on) = 0.025 rDS(on) = 0.029 @ VGS = 4.5 V Max @ VGS = 2.5V Max G2 S2 S2 D G1 S1 S1 D TSSOP-8 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature R R JA JC Symbol VDS VGS ID IDM PD Rating 20 10 6.5 20 2.0 1.6 78 40 -55 to +150 Unit V V A A W W /W /W Tj.Tstg www.kexin.com.cn 1 SMD Type KI8205A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance * On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle Symbol VDSS IDSS IGSS VGS(th) rDS(on) ID(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD 2 %. IS = 1.7 A, VGS = 0 V VDD = 10V ID = 1A , VGS = 4.5V , RG = 6 VDS = 10V , VGS = 4.5V , ID = 3A VDS = 10 V, VGS = 0 V,f = 1.0 MHz Testconditons VGS = 0 V, ID = 250 VDS = 20V , VGS = 0V VDS = 20V , VGS = 0V , TJ =55 VDS = 0V , VGS = 8V 0.5 A Min 20 MOSFET Typ Max Unit V 1 5 100 1 1.5 uA nA V U A VDS = VGS , ID = 250uA VGS = 4.5V , ID = 6.5A VGS = 2.5V , ID = 5.4A VDS = 5V , VGS = 4.5V VDS = 5V , ID =3A 0.020 0.025 0.018 0.029 15 11 700 175 85 7 1.2 1.9 8 10 18 5 16 18 29 10 1.3 0.65 1.2 10 S pF pF pF nC ns A V 2 www.kexin.com.cn |
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